| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which has a salicide process for surely preventing bridging, while restraining parasitic resistance without increasing the number of processes even in an element of a short bridging path, and to provide a semiconductor device obtained by it. SOLUTION: An emitter lead-out electrode 10a, to be connected to a base layer, is formed by forming a second silicon material layer on an insulation film 8 with a connection hole 9 formed on the insulation film 8 on a base layer 7 in a state of embedding, and patterning it. The insulation film 8 is etched by using the emitter lead-out electrode 10a as the mask, and a base opening 21 making the base layer 7 expose is formed. The insulation film 8 is etched anisotropically, and an upper part of the emitter lead-out electrode 10a is made to protrude like eaves from the insulation film 8. A metal film 23 is formed covering the surface of the emitter lead-out electrode 10a and the base layer 7, and is disconnected below the eaves part, and silicide layers 24 to 26 are formed by subjecting it to heat treatment. COPYRIGHT: (C)2003,JPO
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