METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING CONTACT HOLE

摘要

PURPOSE: A method of fabricating a semiconductor device having a contact hole is provided to prevent junction spiking by forming irregular sidewall metal layers at the sidewalls of a contact hole. CONSTITUTION: A metal layer is formed on a semiconductor substrate having a contact hole(106a). The metal layer comprises a bottom and a sidewall metal layer(107a,107b). The bottom metal layer is formed on the surface of an impurity diffusion layer exposed at the contact hole. The sidewall metal layer is formed on the upper sidewall of the contact hole on a protrusion portion(120) and the upper portion of an interlayer dielectric(105).