PATTERNING METHOD FOR SEMICONDUCTOR FABRICATION PROCESS

摘要

PURPOSE: A patterning method for semiconductor fabrication process is provided to form the pattern of a material layer having different line widths by forming the first and the second exposure processes. CONSTITUTION: The first patterning region and the second patterning region are defined on a wafer(100). A material layer is formed on the wafer(101). A photoresist layer is formed on the material layer(104). The first patterning region of the photoresist layer is exposed(106). The second patterning region of the photoresist layer is exposed(107). A photoresist pattern is formed by developing the exposed photoresist layer(109). The pattern of the material layer is formed by etching the exposed material layer. The pattern of the material layer is exposed by removing the photoresist pattern(113,117).