发明名称 n-type thiophene semiconductors
摘要 The new fluorocarbon-functionalized polythiophenes, in particular, alpha,omega-diperfluorohexylsexithiophene DFH-6T (1) can be straightforwardly prepared in high yield and purified by gradient sublimation. Introduction of perfluorocarbon chains on the thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the fluorine-free analog 2. Evaporated films of 1, for example, behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities on the order of ~0.01 cm2/Vs-some of the highest reported to date for n-type organic semiconductors.
申请公布号 US6608323(B2) 申请公布日期 2003.08.19
申请号 US20010915210 申请日期 2001.07.24
申请人 NORTHWESTERN UNIVERSITY;CAMBRIDGE UNIV. TECHNICAL SERVICES, LTD. 发明人 MARKS TOBIN J.;FACCHETTI ANTONIO;SIRRINGHAUS HENNING;FRIEND RICHARD H.
分类号 C08G61/12;H01L27/32;H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L35/24 主分类号 C08G61/12
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