发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device, especially a step for making a via hole penetrating a semiconductor substrate. SOLUTION: Conduction reliability is enhanced between a surface side ground electrode and the rear surface by polishing the rear surface with mat finish after a via hole is made and inserting a barrier metal layer in order to prevent a surface side grounding metal and a rear surface bonding metal from being welded before the rear surface bonding metal is formed. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003243398(A) 申请公布日期 2003.08.29
申请号 JP20020045658 申请日期 2002.02.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TAKAGI TSUNEHIRO;YAMAMOTO SHINJI;TARA KATSUJI;YUASA ISAMU;OMICHI TAKANORI
分类号 H01L29/41;H01L21/3205;H01L23/52;(IPC1-7):H01L21/320 主分类号 H01L29/41
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