METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem that in a method for manufacturing an optical semiconductor integrated circuit device in which a pnp transistor and a photodiode are built, two elements having different characteristics are formed on the same substrate, and hence it is difficult to simultaneously improve the respective characteristics. SOLUTION: The method for manufacturing the optical semiconductor integrated circuit device comprises the steps of separately forming an n+-type exudated region 38 of a pnp transistor 21 and an n+-type diffused region 39 of a photodiode 22. That is, the n+-type exudated region 38 is formed by thermally diffusing an n-type impurity implanted in an emitter leading electrode made of a polysilicon. Meanwhile, the n+-type diffused region 39 is formed by ion implanting. Thus, a cell size of the transistor 21 can be reduced, and the optical sensitivity can be improved in the photodiode 22. COPYRIGHT: (C)2003,JPO