| 摘要 |
PROBLEM TO BE SOLVED: To easily form a contact hole by a self-alignment contact technique as designed even when the interval between adjacent gate electrodes becomes narrower as a semiconductor device is more highly integrated. SOLUTION: A process of manufacturing the semiconductor device includes a stage for forming an etching-preventive film 26 over adjacent gate electrode surfaces and adjacent gate electrodes on a semiconductor substrate 12, a stage for forming a heat-resisting organic insulating film 28 on the etching-preventive film, a stage for removing the organic insulating film above the gate electrodes so that the organic insulating film is left between the gate electrodes, a stage for forming an inter-layer insulating film on the laminated body 30 obtained by the organic insulating film removal stage, a stage for forming a contact hole 36 by removing the inter-layer insulating film on the left organic insulating film to a width wider than the distance between the gate electrodes, and a stage for exposing the semiconductor substrate 12 between the gate electrodes by removing the organic insulating film 28 and etching-preventive film 26 left in the contact hole. COPYRIGHT: (C)2003,JPO
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