| 摘要 |
PROBLEM TO BE SOLVED: To prevent an electrode which is in contact with an uppermost semiconductor layer from being in contact with an active semiconductor layer which is directly involved with operations of other devices and from being separated from the mesa with respect to the mesa-structure semiconductor device, and to provide its manufacturing method. SOLUTION: The electrode 1 which is in contact with an uppermost semiconductor layer 2 of a mesa having an inversely tapered end and being provided without being separated from the uppermost semiconductor layer 2, faces active semiconductor layers 3 and 4 which are directly involved with a device operation on the side of the mesa through a gap 5. COPYRIGHT: (C)2003,JPO
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