| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor manufacturing equipment which suppresses the corrosion of an aluminum film on the surface of a wafer by residual chlorine produced by selectively dry-etching the aluminum film. SOLUTION: The semiconductor manufacturing equipment has such a structure that wafers are carried into an etching chamber 102 one by one and the aluminum film on the surface of each wafer is selectively dry-etched using a chlorine gas, and then a resist is removed from the etched wafer in an ashing chamber 103, and thereafter, an SiO<SB>2</SB>film is deposited on the aluminum film using SiH<SB>4</SB>and O<SB>2</SB>gases in a CVD chamber 104, and the SiO<SB>2</SB>film is etched- back by sheet-fed treatment in an etching chamber 105. COPYRIGHT: (C)2003,JPO
|
