发明名称 |
Non-volatile semiconductor memory structure and method of manufacture |
摘要 |
A non-volatile semiconductor memory cell structure and method of manufacture. The method includes the steps of forming a shallow first-type well layer, a second-type well layer and a deep first-type well layer over a substrate, forming stack gates over the shallow first-type well layer and finally forming source terminals and drain terminals. The source terminals penetrate through the shallow first-type well layer and connect with the second-type well layer. The drain terminals are close to the surface of the shallow first-type well layer. Both the source terminals and the drain terminals contain second type dopants.
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申请公布号 |
US2003173646(A1) |
申请公布日期 |
2003.09.18 |
申请号 |
US20020099801 |
申请日期 |
2002.03.13 |
申请人 |
YANG CHING-SONG;SHEN SHIH-JYE;HSU CHING-HSIANG |
发明人 |
YANG CHING-SONG;SHEN SHIH-JYE;HSU CHING-HSIANG |
分类号 |
H01L21/8246;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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