| 摘要 |
PROBLEM TO BE SOLVED: To provide a layer structure to stably obtain predetermined element performance by the highly sophisticated control of a n-type impurity profile at a hetero interface in a III-group nitride semiconductor element. SOLUTION: A SiO<SB>2</SB>mask 902 having an aperture is formed on a p-GaN optical guide layer 901, a p-AlGaN clad layer 903 is grown from the aperture, and a p-GaN contact layer 904 is formed thereon. The p-AlGaN clad layer 903 is formed in the shape of a ridge because it grows in the vertical direction and lateral direction from the aperture of the SiO<SB>2</SB>mask 901. In this layer structure, a p-type impurity density at the area near the hetero interface of the interface 1 is specified as follows. Namely, when p-type impurity density at the region in the p-GaN contact layer 904 up to the 0.1μm area of the upper direction from the interface 1 is defined as N<SB>1</SB>, and a p-type impurity density at the region in the p-GaN contact layer 904 up to the 0.01μm area of the upper direction from the interface 1 is defined as N<SB>2</SB>, N<SB>1</SB><N<SB>2</SB>, more preferably, 1.5×N<SB>1</SB><N<SB>2</SB><20×N<SB>1</SB>is satisfied. COPYRIGHT: (C)2003,JPO
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