| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of ensuring high withstand voltage, and optimizing a well, and a method for manufacturing it. SOLUTION: This semiconductor device 100 is provided with a first conductive semiconductor board 10, a first conductive well 12 formed on the semiconductor board 10, a gate insulating layer 20 formed on the semiconductor substrate 10, a gate electrode 22 formed on the gate insulating layer 20, and second conductive source/drain layers 14a and 14b formed on the semiconductor substrate 10. The first conductive well 12 is formed to include a channel area, and not to be overlapped on the source/drain layers 14a and 14b. COPYRIGHT: (C)2003,JPO
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