| 摘要 |
PROBLEM TO BE SOLVED: To offer a semiconductor laser device with increased design freedom, better workability, and higher reliability. SOLUTION: On an n-GaAs substrate 11, an n-Al<SB>0.52</SB>Ga<SB>0.48</SB>As lower cladding layer 12, an n-InGaAsP or i-InGaAsP lower light guide layer 13, an i-InGaAs compressively-strained quantum well active layer 14, a p-InGaAsP or i-InGaAsP upper light guide layer 15, a p-In<SB>0.49</SB>Ga<SB>0.51</SB>P first upper cladding layer 16, a p-InGaAsP etching stop layer 17 and an n-InGaP current blocking layer 18 (from which regions corresponding to stripe regions are removed), a p-In<SB>0.49</SB>Ga<SB>0.51</SB>P second upper cladding layer 19, and a p-GaAs contact layer 20, are laminated in the described order. The lower cladding layer and the upper cladding layer differ in composition. COPYRIGHT: (C)2004,JPO
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