| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element having high reliability even when an ambient temperature is equal to or higher than 75°C. SOLUTION: The semiconductor laser element 1 is constituted of a clad layer 3, an active layer 4, another clad layer 5 and an etching stopper layer 8 which are sequentially formed on a semiconductor base board 2, a ridge unit 9, formed by laminating the other clad layer 7 and a cap layer 8, and a current blocking layer 10, pinching the ridge unit 9, which are formed on the etching stopper layer 6, a contact layer 11 and an ohmic electrode 12 which are sequentially laminated on the ridge unit 9 and the current blocking layer 10, and another ohmic electrode 13 formed on the semiconductor base board 2 at the opposite side of the laminating direction. The thickness of the contact layer 11 is specified in the range of 0.1μm-2.5μm while the thickness of the ohmic electrode 12 is specified in the range of 1.5μm-5μm. COPYRIGHT: (C)2004,JPO
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