| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a gate insulation layer having good characteristics, and its fabricating method. SOLUTION: The method for fabricating a semiconductor device 100 comprises step (a) for forming an insulation layer and a conductive layer sequentially on a semiconductor substrate 10, step (b) for forming a gate insulation layer 120 and a gate electrode 14 by patterning the insulation layer and the conductive layer, and step (c) for forming a protective layer 220 on the entire surface and then forming a region 12a containing nitrogen at the end parts of the gate insulation layer 12 by performing heat treatment under an atmosphere containing nitrogen gas. COPYRIGHT: (C)2004,JPO
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