| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing ferroelectric memory element by which a capacitor portion can be formed on the surface of a substrate with high shape accuracy and which can cope with an increase in area of the substrate. SOLUTION: The ferroelectric memory element manufactured by this method is provided with a capacitor portion having a laminated structure of a first electrode 32, a ferroelectric film 34, and a second electrode 36 on a substrate 25. The first electrode 32, the ferroelectric film 34, and the second electrode 36 are formed one after another after the pattern of a surface modifying film 30 having such a surface characteristic that hardly causes the material constituting the capacitor portion to deposit on the surface of the film 30 is formed in an area except the forming area of the first electrode 32. The surface modifying film 30 formed on one substrate 25 is divided into a plurality of partial patterns and each partial pattern is formed by micro-contact printing. COPYRIGHT: (C)2004,JPO
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