| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a highly reliable capacitive element having an amorphous metal oxide film by depositing the amorphous metal oxide film exhibiting excellent film quality by low temperature processing, and a semiconductor device. SOLUTION: Low temperature processing can be achieved over the entire process by performing a step for depositing an amorphous metal oxide film, e.g. an amorphous tantalum oxide film and then performing a step for improving the film quality of the amorphous tantalum oxide thin film while sustaining an amorphous state by high density plasma irradiation at an ion current density of 5 mA/cm<SP>2</SP>or above containing at least oxygen produced by ion and radical reaction. Since the amorphous tantalum oxide film exhibiting excellent film quality can be deposited, reliability can be enhanced while reducing a cost. COPYRIGHT: (C)2004,JPO
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