POLYCRYSTALLINE SILICON FILM AND PRODUCTION METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To solve the problem that crystallinity as a film cannot be improved since a conventional polycrystalline silicon film contains a large amount of amorphous constituent even after laser annealing. SOLUTION: The gas seed of a halogen-based silicon raw material is used, the temperature of a substrate 4 is set to 150 to 200°C for carrying out a plasma CVD method, and an amorphous silicon film 5a having a crystalline nucleus is formed on the substrate 4. After that, a laser beam 24 having an energy density of 300 mJ/cm2or smaller is irradiated by laser annealing. COPYRIGHT: (C)2004,JPO