发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY
摘要 PROBLEM TO BE SOLVED: To provide a method by which a semiconductor device having a structure that has a possibility of becoming mechanically fragile such as a thin wall section can be formed without breaking the device. SOLUTION: The semiconductor device manufactured by this method has thin wall sections 21 and thick wall sections 11 and 11 provided around the thin wall sections 21, both of which are formed by engraving a semiconductor substrate 1. The semiconductor substrate 1 is divided into individual elements by etching the prescribed positions of the thick wall sections 11 and 11 from both surfaces of the substrate 1. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003298070(A) 申请公布日期 2003.10.17
申请号 JP20020103882 申请日期 2002.04.05
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 MIYAJIMA HISAKAZU;OKA NAOMASA;OGIWARA ATSUSHI;OKUTO TAKASHI;TAKAMI SHIGENARI;KANI MITSUHIRO
分类号 G01L9/00;H01L29/84;(IPC1-7):H01L29/84 主分类号 G01L9/00
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