| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a polycrystalline semiconductor layer with a large film thickness, which is formed on an insulating layer at the same time of epitaxial growth, and to provide a manufacture method therefor. SOLUTION: A Si/SiGe layer 7 constituted of a Si buffer layer 7d, a SiGe spacer layer 7a, an inclined SiGe layer 7b and a Si cap layer 7c is epitaxially grown above a collector opening 5. A polycrystalline layer 8 is deposited on the upper layer of a nitride film 6 and on sides of an oxide film 5 and the nitride film 6. Films of a SiGe spacer layer and the like are formed after the Si buffer layer 7d is formed. Thus, non-selected epitaxial growth is surely performed, and the polycrystalline layer 8 is also deposited on the nitride film 6. COPYRIGHT: (C)2004,JPO
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