发明名称 |
Active pixel sensor with nanowire structured photodetectors |
摘要 |
An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device. |
申请公布号 |
US9490283(B2) |
申请公布日期 |
2016.11.08 |
申请号 |
US201414293164 |
申请日期 |
2014.06.02 |
申请人 |
ZENA TECHNOLOGIES, INC. |
发明人 |
Yu Young-June;Wober Munib |
分类号 |
H01L29/15;H01L27/146;H01L31/0232;H01L31/0352;H01L31/101;H01L31/102;H01L31/112 |
主分类号 |
H01L29/15 |
代理机构 |
Pillsbury Winthrop Shaw Pittman LLP |
代理人 |
Pillsbury Winthrop Shaw Pittman LLP |
主权项 |
1. A device comprising:
a substrate having a front side and a back side opposite the front side; a nanowire photodetector located on the front side; and an active pixel readout circuit within the substrate in the back side. |
地址 |
Cambridge MA US |