发明名称 Laser repair operation
摘要 A method of conducting a laser repair operation. A silicon wafer has a plurality of chips thereon. Each chip has a plurality of bonding pads, a plurality of testing pads, a plurality of fuses and a passivation layer for protecting the chip. The passivation layer exposes the bonding pads and the testing pads. A bump-forming process is conducted to form a bottom metallic layer and a bump sequentially over each bonding pad. Only a bottom metallic layer is formed over each testing pad. The bumps axe formed, for example, by electroplating or printing. Testing is carried out by probing various bottom metallic layers above the testing pads. Finally, a laser repair is conducted.
申请公布号 US6667195(B2) 申请公布日期 2003.12.23
申请号 US20010923665 申请日期 2001.08.06
申请人 UNITED MICROELECTRONICS CORP. 发明人 LIU HERMEN
分类号 H01L23/485;H01L23/525;(IPC1-7):H01L21/82;H01L21/00 主分类号 H01L23/485
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