发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
In a semiconductor device having P type and N type wells formed bordering on a step on a P type semiconductor substrate, a first transistor (precise transistor) having a first linewidth is formed on the P type well in a step lower region while a second transistor (high-voltage transistor) having a second linewidth greater than a linewidth of the first transistor is formed on the N type well in a step higher region.
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申请公布号 |
US6674114(B2) |
申请公布日期 |
2004.01.06 |
申请号 |
US20020059870 |
申请日期 |
2002.01.29 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
TANIGUCHI TOSHIMITSU;MORI SHINYA;ISHIBE SHINZO;SUZUKI AKIRA |
分类号 |
H01L21/28;H01L21/3213;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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