发明名称 |
APPARATUS AND METHOD FOR MULTILAYER DEPOSITION |
摘要 |
An apparatus may include an extraction assembly comprising at least a first extraction aperture and second extraction aperture, the extraction assembly configured to extract at least a first ion beam and second ion beam from a plasma; a target assembly disposed adjacent the extraction assembly and including at least a first target portion comprising a first material and a second target portion comprising a second material, the first target portion and second target portion being disposed to intercept the first ion beam and second ion beam, respectively; and a substrate stage disposed adjacent the target assembly and configured to scan a substrate along a scan axis between a first point and a second point, wherein the first target portion and second target portion are separated from the first point by a first distance and second distance, respectively, the first distance being less than the second distance. |
申请公布号 |
WO2016183137(A1) |
申请公布日期 |
2016.11.17 |
申请号 |
WO2016US31746 |
申请日期 |
2016.05.11 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
LIKHANSKII, Alexandre;LEE, William Davis;RADOVANOV, Svetlana B. |
分类号 |
C23C14/48;C23C14/22;C23C14/34;C23C14/50 |
主分类号 |
C23C14/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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