发明名称 APPARATUS AND METHOD FOR MULTILAYER DEPOSITION
摘要 An apparatus may include an extraction assembly comprising at least a first extraction aperture and second extraction aperture, the extraction assembly configured to extract at least a first ion beam and second ion beam from a plasma; a target assembly disposed adjacent the extraction assembly and including at least a first target portion comprising a first material and a second target portion comprising a second material, the first target portion and second target portion being disposed to intercept the first ion beam and second ion beam, respectively; and a substrate stage disposed adjacent the target assembly and configured to scan a substrate along a scan axis between a first point and a second point, wherein the first target portion and second target portion are separated from the first point by a first distance and second distance, respectively, the first distance being less than the second distance.
申请公布号 WO2016183137(A1) 申请公布日期 2016.11.17
申请号 WO2016US31746 申请日期 2016.05.11
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 LIKHANSKII, Alexandre;LEE, William Davis;RADOVANOV, Svetlana B.
分类号 C23C14/48;C23C14/22;C23C14/34;C23C14/50 主分类号 C23C14/48
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