| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to be capable of preventing notching and residues of a polysilicon layer when a gate is patterned. CONSTITUTION: A polysilicon layer(13) is deposited on a silicon substrate(11) having a gate oxide layer(12). The polysilicon layer is crystallized by annealing at the temperature of 600-1000°C. A metallic conductive layer(14) is formed on the polysilicon layer. After forming a hard mask(15) on the metallic conductive layer, a gate electrode is formed by dry-etching of the metallic conductive layer and the crystallized polysilicon layer using the hard mask as an etch barrier.
|
