| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to prevent losses of silicon when depositing a Ti film by using TiCl4 as a source gas. CONSTITUTION: A contact hole is formed to expose a junction region(26) through an interlayer dielectric(27). A silicon layer is selectively formed on the exposed junction region by using thermal UHVCVD(Ultra High Vacuum Chemical Vapor Deposition). A titanium film(29) as a barrier layer is formed on the contact hole by using TiCl4 as a source gas. A metal film is then filled into the contact hole.
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