| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to increase dielectric constant by using a stacked structure of a SiO2 layer and a SiON layer. CONSTITUTION: An isolation region(23) is formed on a semiconductor substrate(21) to define an active region within a core region. A screen insulating layer is formed on the entire surface of the semiconductor substrate. A photoresist pattern is formed on the screen insulating layer. Nitrogen ions are implanted into the semiconductor substrate(21) by using the photoresist pattern. The photoresist pattern and the screen insulating layer are removed. An oxide layer is formed on the entire surface of the semiconductor substrate. The oxide layer is changed to a SiON layer by performing a thermal process. A conductive layer for gate electrodes is formed on the gate insulating layer. A gate electrode(31) is formed by etching the conductive layer. An LDD region(33) is formed on the semiconductor substrate of both sides of the gate electrode. An interlayer dielectric including a contact hole is formed on the entire surface of the semiconductor substrate(21). A contact plug is formed.
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