| 摘要 |
PURPOSE: A method for forming a fuse of a semiconductor device is provided to be capable of preventing the generation of a crack phenomenon by forming a guard contact plug around a fuse. CONSTITUTION: The first interlayer dielectric(43), the first metal line(45), and the second interlayer dielectric(47) are sequentially formed at the upper portion of a semiconductor substrate(41). A fuse(49) is formed at the predetermined upper portion of the second interlayer dielectric. The third interlayer dielectric(51) is formed on the entire surface of the resultant structure. A plurality of contact holes are formed at the resultant structure by carrying out a photolithography process using a contact mask. At this time, the upper portion of the first metal line and the peripheral portion of the fuse are exposed to outside through the contact hole. A contact plug(54) and a guard contact plug(53) are formed at the inner portions of the contact holes. The second metal line(55) is formed at the upper portion of the resultant structure.
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