发明名称 |
THIN FILM TRANSISTOR APPARATUS AND MANUFACTURING METHOD THEREOF, THIN FILM TRANSISTOR SUBSTRATE PROVIDED WITH THE SAME, AND DISPLAY APPARATUS |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film transistor apparatus capable of properly forming an LDD region even when a thin gate insulation film is employed and properly activating impurities. <P>SOLUTION: After a gate electrode is formed, n-type impurities with high concentration are injected by using a resist mask for etching a gate insulation film, and after SiO<SB>2</SB>as a first interlayer insulation film is formed, laser activation is performed. Addition of a photolithography processes can be avoided by injecting the impurities by using the resist mask for etching and a problem of the injection of excessive n-type impurities to the LDD region can be avoided even when the thin gate insulation film is employed. Further, by changing the thickness of the SiO<SB>2</SB>film being the first interlayer insulation film depending on the thickness of the gate insulation film, a reflectance (120b) of the high concentration impurity injection region being a source and drain region and a reflectance (121b) of the LDD region can be mede nearly equal with respect to a laser beam. Both the regions can sufficiently be activated at the same time. <P>COPYRIGHT: (C)2004,JPO</p> |
申请公布号 |
JP2004039997(A) |
申请公布日期 |
2004.02.05 |
申请号 |
JP20020197881 |
申请日期 |
2002.07.05 |
申请人 |
FUJITSU DISPLAY TECHNOLOGIES CORP |
发明人 |
HOTTA KAZUE;KUROSAWA NORIO |
分类号 |
G02F1/1368;G02F1/136;H01L21/20;H01L21/265;H01L21/266;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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