发明名称 |
Method of forming a semiconductor device |
摘要 |
A method of forming a semiconductor device includes a liner is conformally stacked on a semiconductor substrate before coating an SOG layer thereon, and then curing the SOG layer, preferably in an ambient of oxygen radicals formed at a temperature of 1000° C. or higher when oxygen and hydrogen are supplied. The oxygen radicals are preferably formed by irradiating ultraviolet rays to ozone or forming oxygen plasma. The SOG layer is preferably made of a polysilazane-based material that may promote a conversion of the SOG layer into a silicon oxide layer.
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申请公布号 |
US6699799(B2) |
申请公布日期 |
2004.03.02 |
申请号 |
US20020134747 |
申请日期 |
2002.04.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN DONG-HO;HONG SOO-JIN;LEE JUNG-IL;PARK KYUNG-WON |
分类号 |
H01L21/3105;H01L21/316;H01L21/762;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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