发明名称 |
Method for estimating capacitance of deep trench capacitors |
摘要 |
A method for estimating capacitance of deep trench capacitor in a substrate. After a photoresist layer used to define the region of the lower electrode is formed on an oxide layer doping with a conducting type dopant, the height difference of the photoresist layer between the memory cell array area and the supporting area is measured. The radicand of the height difference is directly proportional to a capacitance of a capacitor to-be-formed in the trenches.
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申请公布号 |
US6703311(B2) |
申请公布日期 |
2004.03.09 |
申请号 |
US20020163240 |
申请日期 |
2002.06.04 |
申请人 |
NAENAYA TECHNOLOGY CORPORATION |
发明人 |
TSAI TZU-CHING;MAO HUI MIN;CHUANG YING HUAN;LEE YU-PI |
分类号 |
G01R31/27;H01L21/8242;H01L23/544;(IPC1-7):H01L21/302 |
主分类号 |
G01R31/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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