发明名称 |
Nanofabrication for InAs/AlSb heterostructures |
摘要 |
A heterostructure comprising: a buffer layer; a bottom barrier layer formed on the buffer layer; a quantum well layer formed on the bottom barrier layer; a top barrier layer formed on the quantum well layer; and a p-doped cap layer formed on the top barrier layer; wherein a portion of the cap layer is etched to form conducting electrons in the quantum well layer below the etched portion of the cap layer. A method of etching comprising the steps of: providing a heterostructure; providing an etchant solution comprising acetic acid, hydrogen peroxide, and water; and contacting the etchant solution to the heterostructure to etch the heterostructure.
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申请公布号 |
US6703639(B1) |
申请公布日期 |
2004.03.09 |
申请号 |
US20020320419 |
申请日期 |
2002.12.17 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
YANG MING-JEY;YANG CHIA-HUNG |
分类号 |
H01L21/306;H01L21/335;H01L29/205;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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