| 摘要 |
PURPOSE: A method for forming a semiconductor gate line is provided to simplify a fabricating process by omitting a sidewall spacer process, and to easily control residual oxide due to high etch selectivity of polysilicon and a gate oxide by performing only a gate etch process. CONSTITUTION: After polysilicon is deposited on a silicon substrate(20), a gate pattern(30) is formed. The polysilicon is laterally etched to the half thickness of the polysilicon. The polysilicon is etched by using the gate pattern as a mask, but the etch process stops before the silicon substrate. The gate pattern is eliminated to form a large gate region enough to cover an N and P channel lightly-doped-drain(LDD) ion implantation regions. A source/drain ion implantation process is performed to form a source/drain region. A blank gate etch process is performed to form a gate pattern having the same size as a real gate region. An LDD ion implantation process is performed to form an LDD region so that a final gate line is formed.
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