发明名称 |
Single-substrate-processing apparatus for semiconductor process |
摘要 |
A single-substrate-processing apparatus includes an airtight process chamber, in which a worktable is supported by a pedestal. A conduction structure is arranged to conduct static electricity generated on the worktable and a wafer thereon to a grounded portion outside the process chamber. The conduction structure has a conductive film formed on insulating surfaces of the worktable and the pedestal.
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申请公布号 |
US6719849(B2) |
申请公布日期 |
2004.04.13 |
申请号 |
US20010855493 |
申请日期 |
2001.05.16 |
申请人 |
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发明人 |
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分类号 |
G21K5/00;C23C16/458;H01J37/32;H01L21/00;H01L21/02;H01L21/205;H01L21/22;H01L21/302;H01L21/3065;H01L21/324;H01L21/683;H05H1/46;(IPC1-7):H01L21/00;C23C16/00 |
主分类号 |
G21K5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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