发明名称 Single-substrate-processing apparatus for semiconductor process
摘要 A single-substrate-processing apparatus includes an airtight process chamber, in which a worktable is supported by a pedestal. A conduction structure is arranged to conduct static electricity generated on the worktable and a wafer thereon to a grounded portion outside the process chamber. The conduction structure has a conductive film formed on insulating surfaces of the worktable and the pedestal.
申请公布号 US6719849(B2) 申请公布日期 2004.04.13
申请号 US20010855493 申请日期 2001.05.16
申请人 发明人
分类号 G21K5/00;C23C16/458;H01J37/32;H01L21/00;H01L21/02;H01L21/205;H01L21/22;H01L21/302;H01L21/3065;H01L21/324;H01L21/683;H05H1/46;(IPC1-7):H01L21/00;C23C16/00 主分类号 G21K5/00
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