发明名称 SEMICONDUCTOR MEMORY WITH COMPATIBILITY BETWEEN PRECEDING GENERATION CHIP AND FOLLOWING GENERATION CHIP
摘要 PURPOSE: A semiconductor memory is provided to obtain compatibility between a preceding generation chip and a following generation chip for the same package product by equalizing the number of cell array blocks in the following generation chip with that of cell arrays or cell array blocks in the preceding generation chip. CONSTITUTION: A semiconductor memory includes a plurality of memory cell arrays. Each memory cell array is composed of a plurality of memory cell units. The memory cell units are formed like a matrix structure. The plurality of memory cell arrays are divided into a plurality of cell array blocks. Each cell array block includes two or more memory cell arrays. The cell array blocks output first Pass/Fail signals, respectively. The first Pass/Fail signal represents success or failure of an operation.
申请公布号 KR20040038770(A) 申请公布日期 2004.05.08
申请号 KR20030075767 申请日期 2003.10.29
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKAMURA HIROSHI;YAMAMURA TOSHIO
分类号 G11C17/00;G11C5/02;G11C16/02;G11C16/04;G11C16/10;H01L27/115;(IPC1-7):H01L27/115 主分类号 G11C17/00
代理机构 代理人
主权项
地址