发明名称 METHOD FOR FORMING PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a pattern so as to obtain a vertical profile of a resist wall during developing when a thick resist layer is formed by using a photosensitive film in a LIGA (Lithographie, Galvanoformung, Abformung)-like process. SOLUTION: In the method for forming a pattern to forming a thick film resist layer 21 by laminating a plurality of photosensitive films 20, each photosensitive film 20 is exposed at each time of lamination, and after all the photosensitive films 20 are laminated, they are developed. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004157422(A) 申请公布日期 2004.06.03
申请号 JP20020324617 申请日期 2002.11.08
申请人 NIKON CORP 发明人 ONO ICHIROU
分类号 G03F7/26;C25D5/02;G03F7/20;(IPC1-7):G03F7/20 主分类号 G03F7/26
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