SYSTEM FOR CONTROLLING POLISHING TIME OF EACH LAYER IN CHEMICAL MECHANICAL POLISHING PROCESS FOR MULTILAYERED LAYER AND METHOD THEREOF

摘要

PURPOSE: A system for controlling the polishing time of each layer in a CMP(Chemical Mechanical Polishing) process for a multilayered layer and a method thereof are provided to be capable of optimizing the polishing time. CONSTITUTION: A system for controlling the polishing time of each layer in a CMP process for a multilayered layer is provided with a polishing part(120), a measurement part(160) for measuring the thicknesses of the layer before and after the CMP process, a data base(150) for storing the thickness data supplied from the measurement part, and an end point detecting system(130) for controlling the polishing part. The system further includes a closed loop control maintenance part(140) for calculating the polishing time using the thickness data of the measurement part and polishing the layer using a closed loop control process, and an operator part(110) for inputting the setting data of CMP process recipes and monitoring the progressing state of the CMP process.