| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a low k dielectric material having <3 k, used for producing an integrated circuit in an electronic device or a super small type electronic device. <P>SOLUTION: A poly(arylene ether) containing a structure of formula 1 [wherein, (n) is 5-10,000; and monovalent Ar<SB>1</SB>and divalent Ar<SB>2</SB>are each selected from the group of specific heteroaromatic compounds obtained by introducing O, N, Se, S or Te, or a combination of these elements] is used as a low k dielectric layer in an electronic use. Articles of the devices contain the poly(arylene ether). <P>COPYRIGHT: (C)2004,JPO</p> |
