| 摘要 |
PROBLEM TO BE SOLVED: To provide a power MOSFET capable of suppressing on-resistance. SOLUTION: A power MOSFET 10 is formed flat with a power MOSFET circuit made in a first principal surface. The first principal surface of it has a source electrode pad 31 installed overall with a protective film 32 that covers the fitted source electrode pad 31. A plurality of source openings 34 for exposing the source electrode pad 31 are scattered across the protective film 32. Since the plurality of source openings constituting an external terminal of the source electrode pad can evenly pick up a source current regardless of position or azimuth, the on-resistance of the power MOSFET is suppressed. COPYRIGHT: (C)2004,JPO |
