| 摘要 |
PURPOSE: To provide a plasma processing apparatus which does not require replacement of protection members as frequently as a conventional apparatus. CONSTITUTION: The plasma processing apparatus comprises a plasma chamber(107) in which a high-density plasma is generated; a sample chamber in communication with the plasma chamber for housing a sample(103) to be processed using the plasma; and a protection tube(2) for protecting an inner wall of the plasma chamber from deposition of a product that results from the plasma processing, wherein the protection tube is composed of a plurality of pieces formed in relation to a distribution of temperatures in the plasma chamber at a time of the plasma processing, wherein the plasma chamber is tubular in shape, the protection tube is tubular in shape and inserted in the plasma chamber, and each of the plurality of pieces is a tubular member disposed in an axial direction of the protection tube, wherein the protection tube is provided with at least one groove formed on an inner wall thereof in parallel with an axis of the protection tube, wherein the protection tube is provided with a plurality of grooves formed on the inner wall thereof in parallel with an axis of the protection tube at substantially equal circumferential intervals, wherein the protection tube is made of quartz, wherein the sample is subjected to sputtering using the plasma, wherein the plasma is an electron cyclotron resonance plasma, wherein the plasma is an inductively coupled plasma, and wherein the plasma is a helicon wave plasma.
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