METHOD FOR PREPARING HIGH PURITY SILICON CARBIDE FROM WASTE SEMICONDUCTOR SLURRY

摘要

PURPOSE: Provided is a method for preparing a high purity silicon carbide from waste semiconductor slurries and waste electrode powders. CONSTITUTION: The method comprises steps of (a) treating waste semiconductor slurries generated from a cutting process of silicon wafer to obtain silicon powders; (b) pulverizing waste electrode into graphite powders; (c) after mixing the silicon powders with the graphite powders and molding the mixture into a fixed shape, synthesizing it into silicon carbide by using a silicon carbonizing method at a temperature of at least 1,600 deg.C; and (d) after pulverizing the silicon carbide sintered body, removing impurities therefrom to obtain a highly pure silicon carbide.