发明名称 |
Method for selective trimming of gate structures and apparatus formed thereby |
摘要 |
A method for forming a trimmed gate in a transistor comprises the steps of forming a polysilicon gate conductor on a semiconductor substrate and trimming the polysilicon portion by a film growth method chosen from among selective surface oxidation and selective surface nitridation. The trimming step may selectively compensate n-channel and p-channel devices. Also, the trimming film may optionally be removed by a method chosen from among anisotropic and isotropic etching. Further, gate conductor spacers may be formed by anisotropic etching of the grown film. The resulting transistor may comprise a trimmed polysilicon portion of a gate conductor, wherein the trimming occurred by a film growth method chosen from among selective surface oxidation and selective surface nitridation.
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申请公布号 |
US6759315(B1) |
申请公布日期 |
2004.07.06 |
申请号 |
US19990224759 |
申请日期 |
1999.01.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK C.;HOLMES STEVEN J.;HORAK DAVID V.;RABIDOUX PAUL A. |
分类号 |
H01L21/60;H01L21/768;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/60 |
代理机构 |
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地址 |
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