| 摘要 |
PURPOSE: A method for forming a trench isolation layer of a semiconductor device is provided to improve reliability and yield by forming a liner nitride layer using HDP(High Density Plasma). CONSTITUTION: A trench mask pattern including a pad oxide pattern(21) and a pad nitride pattern(22) is formed on a silicon substrate(20). A trench is formed by selectively etching the substrate using the trench mask pattern. A thermal oxide layer(24) is formed on the trench. A liner nitride layer(25) is formed by nitridation of the surface of the thermal oxide layer using HDP. Then, an insulating layer is filled in the trench.
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