| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device and method capable of performing high-speed processing and stably utilizing a plasma, and a manufacturing method of an electronic device.SOLUTION: In an inductively coupled plasma torch unit T, coils 3a and 3b, a first ceramic block 4 and a second ceramic block 5 are disposed and a chamber 7 is annular. A plasma P that is generated within the chamber 7 is emitted from an opening 8 in the chamber 7 towards a backing material 1. The chamber 7 and the backing material 1 are relatively moved in a direction that is vertical to a length direction of the opening 8, thereby processing the backing material 1. A gas is exhausted from gas exhaustion piping 26 while supplying dry air from a slit A31 around a rotating cylindrical ceramic pipe 13, thereby suppressing undesired plasma generation, further, the plasma can be generated with high power efficiency and high-speed plasma processing can be performed.SELECTED DRAWING: Figure 1 |
