| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of void in a metal wiring by suppressing the thermal expansion of the metal wiring upon forming an interlayer insulating film by a high density plasma CVD method so as to cover the metal wiring. SOLUTION: A semiconductor device is provided with a substrate 1, a metal wiring 3 formed on the substrate 1 and whose immediately upper part as well as the immediately lower part is covered by high melting point metal films 2, 4, and the interlayer insulating film 5 formed by the plasma CVD method so as to cover the metal wiring 3. In this case, the thermal expansion of the metal wiring 3 upon forming the interlayer insulating film 5 is suppressed by the coupling force of the metal wiring 3 and the high melting point metal films 2, 4. COPYRIGHT: (C)2004,JPO&NCIPI |
