发明名称
摘要 There is provided an active matrix substrate which enables to shorten a fabrication process of a pixel electrode, improve exposure precision by self alignment, and prevent leakage failures between pixel electrodes. On top of the interlayer insulating film, there are formed pixel electrodes, which are connected to the TFTs through contact holes piercing through the interlayer insulating film. The pixel electrodes are formed by applying on the interlayer insulating film a photosensitive transparent resin such as negative acrylic polymerized resin containing ITO, ATO or ZnO as transparent conductive particles, performing exposure from the back side of the substrate, and conducting development.
申请公布号 KR100442510(B1) 申请公布日期 2004.07.30
申请号 KR20010030803 申请日期 2001.06.01
申请人 发明人
分类号 G02F1/1343;G03F7/004;G02F1/1362;G02F1/1368;G03F7/20;G09F9/30;H01L27/146 主分类号 G02F1/1343
代理机构 代理人
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