| 摘要 |
PURPOSE: A wafer bonding machine with plasma treatment and control method thereof are provided to be capable of preventing environmental pollution and improving the characteristic of attachment by attaching between substrates using plasma instead of an adhesive in vacuum state. CONSTITUTION: Vacuum state is conserved in a substrate attaching chamber(1) by using vacuum exhaust pump(15). Hydrogen gas is supplied from a gas cylinder(19) through a gas flow rate controller(18) to the substrate attaching chamber(1). Plasma is generated between an upper substrate(24) and a lower substrate(23) by using RF(Radio Frequency) voltage regulator(21). At this time, the surfaces of the upper and lower substrate(24,23) are activated by the plasma. Then, the attachment between the upper and lower substrate(24,23) is carried out from the center portion to the edge portion by using pressure.
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