发明名称 |
ONO interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition process |
摘要 |
A method of fabricating a semiconductor device is disclosed. A wafer substrate is provided. A first silicon oxide layer is formed over the wafer substrate. A nitride layer is formed over the first silicon oxide layer using a low temperature deposition process. A second silicon oxide layer is formed over the nitride layer. The low temperature process can form a nitride layer for an oxide-nitride-oxide (ONO) dielectric structure at about a temperature of 700° C. By such a process, an ONO dielectric structure can be formed using a low temperature deposition process, which can reduce the thickness of the ONO dielectric structure.
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申请公布号 |
US6777764(B2) |
申请公布日期 |
2004.08.17 |
申请号 |
US20020237668 |
申请日期 |
2002.09.10 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HSIEH JUNG-YU;HAN TZUNG-TING |
分类号 |
H01L21/28;H01L21/314;H01L21/318;H01L29/51;H01L29/788;(IPC1-7):H01L31/119 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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