METHODS OF FORMING VARYING DEPTH TRENCHES IN SEMICONDUCTOR DEVICES
摘要
A method of forming trenches in a semiconductor device includes forming an etchant barrier layer above a first portion of a semiconductor layer. A first trench is etched in a second portion of the semiconductor layer using a first etchant. The second portion of the semiconductor layer is not disposed underneath the etchant barrier layer. The etchant barrier layer is etched through using a second etchant that does not substantially etch the semiconductor layer. A second trench is etched in the first portion of the semiconductor layer using a third etchant. The third etchant also extends a depth of the first trench.
申请公布号
HK1186575(A1)
申请公布日期
2016.09.23
申请号
HK20130114024
申请日期
2013.12.18
申请人
OMNIVISION TECHNOLOGIES INC.
发明人
CHEN, Gang;MAO, Duli;TAI, Hsin-Chih;RHODES, Howard E. E