发明名称 |
High-powered light emitting device with improved thermal properties |
摘要 |
A light emitting device includes a first semiconductor layer of a first conductivity type, an active region, and a second semiconductor layer of a second conductivity type. First and second contacts are connected to the first and second semiconductor layers. In some embodiments at least one of the first and second contacts has a thickness greater than 3.5 microns. In some embodiments, a first heat extraction layer is connected to one of the first and second contacts. In some embodiments, one of the first and second contacts is connected to a submount by a solder interconnect having a length greater than a width. In some embodiments, an underfill is disposed between a submount and one of the first and second interconnects. <IMAGE> |
申请公布号 |
EP1450417(A1) |
申请公布日期 |
2004.08.25 |
申请号 |
EP20040100448 |
申请日期 |
2004.02.06 |
申请人 |
LUMILEDS LIGHTING U.S., LLC |
发明人 |
SHEN, YU-CHEN;STEIGERWALD, DANIEL, A.;MARTIN, PAUL, S. |
分类号 |
H01L33/00;H01L23/00;H01L23/06;H01L33/20;H01L33/38;H01L33/62 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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